陈凤翔
更新时间：2023-09-21一、个人基本情况
姓名:陈凤翔
性别:女
出生年月:1979.11
职称/职务:教授
学位:博士研究生
所在系: 理学院物理系
电子邮件:phonixchen79@whut.edu.cn
联系电话:15807177658
二、教育背景与工作经历
1995/09 - 1999/07，中国地质大学(武汉)，物理师资，学士
1999/09 - 2005/04，上海交通大学，光学，博士
2005/04 - 2006/03，武汉理工大学，理学院物理科学与技术系，讲师
2006/04 – 2016/09，武汉理工大学，理学院物理科学与技术系，副教授
2012/09 - 2013/09，美国北卡罗莱纳大学夏洛特分校，电子与计算机工程系，访问学者，导师:dr. yong zhang
2016/10 - 至今，武汉理工大学，理学院物理科学与技术系，教授
三、研究方向
微纳级别的光电器件制备、性能与应用研究，如光电探测器、忆阻器的阻变特性与突触功能模拟等。
四、教学研究
承担《量子力学》、《数学物理方法》的本科课程教学和《导波光学》的研究生课程教学，主持并完成省级教研项目一项，校重点教研项目一项，发表相关教研论文4篇。
五、主要科研成果
(1) tao xiang, fengxiang chen, xiaoli li, xiaodong wang, yuling yan and lisheng wang. simulation of optical and electrical synaptic functions in mos2 / α-in2se3 heterojunction memtransistors. chin. phys. b, 2023, 32:117301.
(2) 余雪玲，陈凤翔，相韬，邓文，刘嘉宁，汪礼胜. rese2/wse2记忆晶体管的光电调控和阻变特性.物理学报，2022，71(21):217302.
(3) wen deng, li-sheng wang, jia-ning liu, tao xiang and feng-xiang chen. high-sensitive phototransistor based on vertical hfse2/mos2 heterostructure with broad-spectral response. chin. phys. b, 2022, 31:128502.
(4) jia-ning liu，feng-xiang chen，wen deng，xue-ling yu, and li-sheng wang, optically-controlled resistive switching effects of cds nanowire memtransistor. chinese physics b, 2021, 30(11): 116105
(5) 邓文，汪礼胜，刘嘉宁，余雪玲，陈凤翔. 光电协控多层mos2记忆晶体管的阻变行为与机理研究.物理学报, 2021, 70(21): 217302
(6) xu jx, tong xd, zhang sy, cheng z, zhang l, zheng ph, chen fx, wang r. zhang y and tan w. experimental and theoretical study on device-processing-incorporated fluorine in algan/gan heterostructures. aip advances.2020,10:065122.
(7) jiyue zou, lisheng wang, and fengxiang chen. improved performance of top-gated multilayer mos2 transistors with channel fully encapsulated by al2o3 dielectric, aip advances, 2019, 9: 095061.
(8) tong xd, wang r. zhang sy, xu jx, zheng ph, chen fx. degradation of ka-band gan lna under high-input power stress: experimental and theoretical insights. ieee transactions on electron devices. 2019, 66(12):5091-5096.
(9) wang r, tong xd, xu jx, zhang sy, zheng ph, chen fx, tan w. assessing the role of fluorine in the performance of alxga1-xn/gan high-electron-mobility transistors from first-principles calculations. physical review applied, 2019,11(5):054021.
(10) rong wang, jianxing xu, shiyong zhang, zhe cheng, lian zhang, penghui zheng, feng-xiang chen, xiaodong tong, yun zhang, and wei tan. defect evolution of oxygen induced vth-shift for on-state biased algan/gan hemts. appl. phys. lett. 2019,115:143504.
(11)rong wang, wei tan, jian zhang, feng-xiang chen, su-huai wei. first-principles study of alloying effects on fluorine incorporation in alxga1−xn alloys. j. phys. d: appl. phys. 2018, 51(6): 065108
(12) changkui, h. , qiong, c. , fengxiang, c. , gfroerer, t. h. , wanlass, m. w. , & yong, z. . overcoming diffusion-related limitations in semiconductor defect imaging with phonon-plasmon-coupled mode raman scattering. light: science & applications, 2018,7(1):23.
(13) wei-kang xu, feng-xiang chen, gong-hui cao, jia-qi wang, li-sheng wang，factors influencing the performance of paintable carbon-based perovskite solar cells fabricated in ambient air，chin. phys. b, 2018, 27(3): 038402
(14)吕恒，胡昌奎，陈凤翔. 砷化镓广延缺陷的拉曼散射.物理学报，2018,67(5):056103.
六、主要科研项目:
1、国家自然科学基金(青年基金)，51702245，gaas中广延缺陷与载流子输运关联研究，2018/01-2020/12，24万元，已结题，主持。
七、学术兼职:无